Vertical memory stacks can transfer data twenty times faster than high-end solid state drives
High-bandwidth memory (HBM4) utilizes vertical chip stacking to achieve data transfer rates exceeding 2 terabytes per second, bypassing the physical bottlenecks that limit traditional solid-state drives and standard memory modules.
Modern artificial intelligence demands data speeds that traditional hardware cannot provide, leading to the development of High-bandwidth memory (HBM). By stacking DRAM dies vertically and connecting them with through-silicon vias, HBM4 achieves data rates over 2TB/s per stack. This is nearly 300 times faster than the 7GB/s sequential read speeds of a high-end NVMe solid-state drive.
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